MT41K64M16TW-107 AUT:J vs K4A4G165WG-BCWE Comparison
Detailed side-by-side comparison of MT41K64M16TW-107 AUT:J by Micron Technology and K4A4G165WG-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
MT41K64M16TW-107 AUT:J ✓ ActiveSamsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ ActiveSpecification Comparison
| Parameter | MT41K64M16TW-107 AUT:J | K4A4G165WG-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.85 | $16.90 |
| Memory Type | SDRAM - DDR3L | DDR4 SDRAM (volatile DRAM) |
| Memory Size | 1 Gbit | 4 Gbit |
| Organization | 64M x 16 | — |
| Interface | Parallel | Parallel |
| Clock Frequency | 933 MHz | [DATA_NEEDED: clock frequency / tCK range] |
| Access Time | 20 ns | 19 ns |
| Supply Voltage | 1.35 V (DDR3L), 1.5 V compatible | 1.2 V |
| Package | 96-FBGA (8 x 14 mm) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Temperature Grade | AUT (automotive) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| CAS Latency | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS latency] |
| Refresh Rate | [DATA_NEEDED: refresh rate] | [DATA_NEEDED: refresh interval] |
| Data Rate | 1866 MT/s (DDR3L-1866) | 3200 Mbps |
| Termination | On-Die Termination (ODT) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Packaging | Tray (T/R per listing) | — |
| Memory Organization | — | 256M x 16 |
| Memory Format | — | DRAM |
| Technology | — | DDR4 |
| Product Status | — | Active |